VF40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Solder dip 275 °C max. , 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	VF40100C
Manufacturer	Vishay
File Size	132.89 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VF40100C Datasheet
Additional preview pages of the VF40100C datasheet.

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Full PDF Text Transcription

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www.vishay.com VF40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TMBS ® ITO-220AB VF40100C 123 PIN 1 PIN 2 PIN 3 PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 100 V IFSM 250 A VF at IF = 20 A 0.61 V TJ max. 150 °C Package ITO-220AB Diode variation Dual common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.

Published: Apr 22, 2014 |