VFT1060C-E3 Datasheet PDF (Dual High Voltage Trench MOS Barrier Schottky Rectifier)

VFT1060C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TO-263AB K TO-262AA K.

Datasheet Details

Part number	VFT1060C-E3
Manufacturer	Vishay
File Size	196.02 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VFT1060C-E3 Datasheet
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Full PDF Text Transcription

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VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A TO-220AB TMBS ® ITO-220AB VT1060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VFT1060C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.

Published: Aug 30, 2017 |