• Part: VFT1060C-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 196.02 KB
Download VFT1060C-E3 Datasheet PDF
Vishay
VFT1060C-E3
FEATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) - Material categorization: for definitions of pliance please see .vishay./doc?99912 TO-263AB K TO-262AA K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT1060C PIN 1 PIN 2 HEATSINK VIT1060C 3 2 1 PIN 1 PIN 2 PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2x5A 60 V 100 A 0.50 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Circuit configuration mon cathode MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding pound meets UL 94 V-0 flammability rating Base P/N-E3 - Ro HS-pliant,...