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VFT1080C - Dual Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition 1 VFT1080C PIN 1 PIN 3 PIN 2 2 3.

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Datasheet Details

Part number VFT1080C
Manufacturer Vishay
File Size 135.70 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VFT1080C Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VFT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT1080C PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5 A TJ max. 2x5A 80 V 80 A 0.
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