VFT30L60C Description
.DataSheet.co.kr New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® ITO-220AB.
VFT30L60C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- pliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
VFT30L60C Applications
- RoHS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: