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VFT30L60C Datasheet Dual Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VFT30L60C
Manufacturer Vishay
File Size 136.63 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Download Download datasheet VFT30L60C Download (PDF)

Overview

www.DataSheet.co.kr New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT30L60C PIN 1 PIN 3 PIN 2.

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