• Part: VFT760-E3
  • Description: Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 128.43 KB
Download VFT760-E3 Datasheet PDF
Vishay
VFT760-E3
FEATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package) - Material categorization: for definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC VBT760 NC K A HEATSINK VIT760 A K NC HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TJ max. Package 7.5...