VI20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).

Vishay

📥 Download Datasheet

Datasheet Details

Part number	VI20100S-E3
Manufacturer	Vishay
File Size	200.83 KB
Description	High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI20100S-E3 Datasheet
Additional preview pages of the VI20100S-E3 datasheet.

📁 Similar Datasheet

VI203CY - DC-DC Converters 50 to 200 Watts (VICOR Corporation)
VI215FI211 - TFT LCD (Toroson)

Other Datasheets by Vishay

VI20100S - High-Voltage Trench MOS Barrier Schottky Rectifier
VI20100SG - High-Voltage Trench MOS Barrier Schottky Rectifier
VI20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI20120S - High-Voltage Trench MOS Barrier Schottky Rectifier
VI20120S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20100S 123 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100S NC K A HEATSINK DESIGN SUPPORT TOOLS VI20100S PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 20 A 100 V 250 A 0.

Published: Jun 4, 2019 |