Datasheet4U.com

VI40M120C Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: New Product V40M120C, VI40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.

📥 Download Datasheet

VI40M120C dual high-voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	VI40M120C
Manufacturer	Vishay
File Size	783.78 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download	VI40M120C Download (PDF)

Key Features

Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ®.
Trench MOS Schottky technology TO-262AA.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition K 2 V40M120C PIN 1 PIN 3 3 1 VI40M120C PIN 1 PIN 3 2 3 1 PIN 2 CASE TYPIC.

More Datasheets from Vishay

Part Number	Description
VI40100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI40100C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI40100G-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI40120C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI40150C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI40150C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier