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VIT10200C - Trench MOS Barrier Schottky Rectifier

Features

  • ITO-220AB.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 VT10200C PIN 1 PIN 3 PIN 2 CASE 3 1 VFT10200C PIN 1 PIN 3 PIN 2 2 3.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1.

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Datasheet Details

Part number VIT10200C
Manufacturer Vishay
File Size 202.93 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VIT10200C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS ® FEATURES ITO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 VT10200C PIN 1 PIN 3 PIN 2 CASE 3 1 VFT10200C PIN 1 PIN 3 PIN 2 2 3 • Solder dip 275 °C max.
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