VIT3060G Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

VIT3060G dual high-voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	VIT3060G
Manufacturer	Vishay
File Size	143.27 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download	VIT3060G Download (PDF)

Overview

www.vishay.com VT3060G, VFT3060G, VBT3060G, VIT3060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VBT3060G PIN 1 K PIN 2 HEATSINK VIT3060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.

Package 2 x 15 A 60 V 150 A 0.

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Not recommended for PCB bottom side wave mounting.
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99.

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