Datasheet4U Logo Datasheet4U.com

VIT5200-E3 - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number VIT5200-E3
Manufacturer Vishay
File Size 192.42 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VIT5200-E3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Vishay

Part Number Description
VIT5200 Trench MOS Barrier Schottky Rectifier
VIT5202-M3 Trench MOS Barrier Schottky Rectifier
VIT10200C Trench MOS Barrier Schottky Rectifier
VIT10200C-E3 Trench MOS Barrier Schottky Rectifier
VIT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AC TMBS ® ITO-220AC VT5200 PIN 1 PIN 2 1 CASE 2 TO-263AB K VFT5200 PIN 1 PIN 2 TO-262AA K 2 1 A NC VBT5200 NC K A HEATSINK VIT5200 NC A K NC K A HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 5.0 A 200 V 80 A 0.65 V 150 °C TO-220AC, ITO-220AC, TO-263AB, TO-262AA Diode variation Single die FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max.
Published: |