Vishay VQ1001J
Quad N-Channel 30-V (D-S) MOSFETs
VQ1001J Specifications
- Package : PDIP
- Drain-Source Resistance : 1Ω
- Drain-Source Voltage : 30V
- Terminals : 14
- Channels : 4
- Max Power Dissipation : 2W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | VQ1001J |
|---|---|
| Datasheet | VQ1001J Download |
| Manufacturer |  Vishay |
| Description | Quad N-Channel 30-V (D-S) MOSFETs |
| Buy | Stock & Price |
FEATURES
D D D D D Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error VoltageAPPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line D1 N S1 G1 NC G2 N S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VQ1001P “S” fllxxyy N Device Marking Top View VQ1001J “S” fllxxyy Top View Plastic: VQ1001J Sidebraze: VQ1001PABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage VQ1001J VQ1001P Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation (Single) Thermal Resistance, Junction-to-Ambient (Single) Operating Junction and Storage Temperature Range Notes a.
