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VS-100MT060WDF - Primary MTP IGBT

Key Features

  • Buck PFC stage with warp 2 IGBT and FRED Pt® hyperfast diode.
  • Integrated thermistor.
  • Isolated baseplate.
  • Very low stray inductance design for high speed operation.
  • Speed 25 kHz to 50 kHz.
  • Designed and qualified for industrial level.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-100MT060WDF Vishay Semiconductors Primary MTP IGBT Power Module MTP PRODUCT SUMMARY FRED Pt® AP DIODE, TJ = 150 °C VRRM 600 V IF(DC) at 80 °C 11 A VF at 25 °C at 60 A 2.08 V IGBT, TJ = 150 °C VCES 600 V VCE(ON) at 25 °C at 60 A 1.98 V IC at 80°C 83 A FRED Pt® CHOPPER DIODE, TJ = 150 °C VR 600 V IF(DC) at 80 °C 17 A VF at 25 °C at 60 A 2.06 V Package MTP Circuit Dual Forward FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt® hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation • Speed 25 kHz to 50 kHz • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.