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VS-10CTQ150-1PbF - High Performance Schottky Rectifier

This page provides the datasheet information for the VS-10CTQ150-1PbF, a member of the VS-10CTQ150SPbF High Performance Schottky Rectifier family.

Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.

Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see ww.

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Datasheet preview – VS-10CTQ150-1PbF

Datasheet Details

Part number VS-10CTQ150-1PbF
Manufacturer Vishay
File Size 158.97 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-10CTQ150-1PbF Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-10CTQ150SPbF, VS-10CTQ150-1PbF Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A VS-10CTQ150SPbF VS-10CTQ150-1PbF Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode D2PAK 2 1 Common 3 Anode cathode Anode TO-262 FEATURES • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max.
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