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VS-10ETS12THM3 - Input Rectifier Diode

General Description

High voltage rectifiers optimized for very low forward voltage drop with moderate leakage.

These devices are intended for use in main rectification (single or three phase bridge).

Key Features

  • Glass passivated pellet chip junction.
  • Meets JESD 201 class 1A whisker test.
  • Flexible solution for reliable AC power rectification.
  • High surge, low VF rugged blocking diode for DC charging stations.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription for VS-10ETS12THM3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VS-10ETS12THM3. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com VS-10ETS12THM3 Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A 2 Base cathode 2 1 3 TO-220AC 2L 1 3 Cathode Anode PRIMARY CHARACTERISTICS I...

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cathode 2 1 3 TO-220AC 2L 1 3 Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR 10 A 1200 V VF at IF IFSM TJ max. 1.1 V 160 A 150 °C Package TO-220AC 2L Circuit configuration Single FEATURES • Glass passivated pellet chip junction • Meets JESD 201 class 1A whisker test • Flexible solution for reliable AC power rectification • High surge, low VF rugged blocking diode for DC charging stations • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.