VS-10UT10
Key Features
- 175 °C high performance Schottky diode
- Very low forward voltage drop
- Extremely low reverse leakage
- Optimized VF vs. IR trade off for high efficiency
- Increased ruggedness for reverse avalanche capability
- RBSOA available
- Negligible switching losses
- Submicron trench technology
- compliant to RoHS Directive 2002/95/EC
- Designed and qualified according to JEDEC-JESD47
