VS-10WT10FN Description
Diode variation EAS I-PAK (TO-251AA), D-PAK (TO-252AA) 10 A 100 V 0.66 V 4 mA at 125 °C 175 °C Single die 54.
VS-10WT10FN Key Features
- 175 °C high performance Schottky diode
- Very low forward voltage drop
- Extremely low reverse leakage
- Optimized VF vs. IR trade off for high efficiency
- Increased ruggedness for reverse avalanche
- RBSOA available
- Negligible switching losses
- Submicron trench technology
- pliant to RoHS Directive 2002/95/EC
- Designed and qualified according to JEDEC-JESD47