VS-16TTS16SPBF Datasheet | Vishay

FEATURES 2 Anode - Meets MSL level 1, per LF maximum peak of 260 °C - Designed and JEDEC-JESD47 qualified J-STD-020, according 2 3 1 1 Cathode 3 Gate - Material categorization: For definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Input rectification (soft start) - Vishay input diodes, switches and output rectifiers which are in identical package outlines TO-263AB (D PAK) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ TO-263AB (D2PAK) Single SCR 10 A 1600 V 1.4 V 60 m A - 40 °C to 125 °C DESCRIPTION The VS-16TTS16SPb F High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.  OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 μm) copper Aluminum IMS, Rth CA = 15 °C/W Aluminum IMS with heatsink, Rth CA = 5 °C/W Note - TA = 55 °C, TJ = 125 °C, footprint 300 mm2 SINGLE-PHASE BRIDGE 2.5 6.3 14.0 THREE-PHASE BRIDGE 3.5 9.5 18.5 A UNITS MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IRMS VRRM/VDRM ITSM VT d V/dt d I/dt TJ 10 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform VALUES 10 16 1600 200 1.4 500 150 - 40 to 125 UNITS A V A V V/μs A/μs °C VOLTAGE RATINGS PART NUMBER VS-16TTS16SPb F VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1600 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 1600 IRRM/IDRM AT 125 °C m A 10 Revision: 26-Jul-13 Document Number: 94590 1 For technical questions within your region: Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT .vishay./doc?91000 Free Datasheet http://.datasheetlist./ VS-16TTS16SPb F Series .vishay. Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS...