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VS-20CTQ040-1-M3 - High Performance Schottky Rectifier

This page provides the datasheet information for the VS-20CTQ040-1-M3, a member of the VS-20CTQ035S-M3 High Performance Schottky Rectifier family.

Datasheet Summary

Description

The VS-20CTQ center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.

Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definit.

📥 Download Datasheet

Datasheet preview – VS-20CTQ040-1-M3

Datasheet Details

Part number VS-20CTQ040-1-M3
Manufacturer Vishay
File Size 225.53 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-20CTQ040-1-M3 Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-20CTQ...S-M3, VS-20CTQ...-1-M3 Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-20CTQ...S-M3 2 1 Common 3 Anode cathode Anode VS-20CTQ...-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 2 x 10 A 35 V, 40 V, 45 V 0.
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