VS-20MT120PFP Description
VS-20MT120PFP Vishay Semiconductors “Full Bridge” IGBT MTP (TrenchStop IGBT), 57 A MTP (Package example) PRIMARY CHARACTERISTICS VCES IC at TC = 25 °C VCE(on) Speed 1200 V 57 A 1.84 V 8 kHz to 30 kHz Package MTP Circuit configuration Full bridge.
VS-20MT120PFP Key Features
- Trench and Field Stop IGBT technology
- Positive VCE(on) temperature coefficient
- 10 μs short circuit capability
- HEXFRED® antiparallel diodes with ultrasoft
- Low diode VF
- Square RBSOA
- Aluminum nitride DBC
- Very low stray inductance design for high speed operation
- UL approved file E78996
- Designed and qualified for industrial level
VS-20MT120PFP Applications
- Rugged with ultrafast performance