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VS-30CTQ035HN3 - High Performance Schottky Rectifier

General Description

The VS-30CTQ center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage.

Key Features

  • 175 °C TJ operation.
  • Very low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • AEC-Q101 qualified meets JESD 201 class 2 whisker test.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VS-30CTQ035HN3
Manufacturer Vishay
File Size 412.97 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-30CTQ035HN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-30CTQ0..HN3 Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A Base 2 common cathode TO-220AB Anode 2 Anode 1 Common 3 cathode PRODUCT SUMMARY IF(AV) VR VF at IF IRM max. TJ max. EAS Package Diode variation 2 x 15 A 35 V, 40 V, 45 V 0.56 V 15 mA at 125 °C 175 °C 27 mJ TO-220AC Common cathode FEATURES • 175 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • AEC-Q101 qualified meets JESD 201 class 2 whisker test • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-30CTQ...