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VS-30CTQ100-1PbF - High Performance Schottky Rectifier

Download the VS-30CTQ100-1PbF datasheet PDF (VS-30CTQ080SPbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high performance schottky rectifier.

Description

This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.

Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see ww.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS-30CTQ080SPbF-Vishay.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.vishay.com VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A TO-263AB (D2PAK) TO-262AA Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-30CTQ...SPbF 2 1 Common 3 Anode cathode Anode VS-30CTQ...-1PbF PRODUCT SUMMARY Package TO-263AB (D2PAK), TO-262AA IF(AV) 2 x 15 A VR 80 V to 100 V VF at IF 0.67 V IRM 7 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 7.
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