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VS-30EPH06HN3 Datasheet Hyperfast Rectifier

Manufacturer: Vishay

General Description

/ APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current VRRM IF(AV) IFSM Operating junction and storage temperatures TJ, TStg TEST CONDITIONS TC = 116 °C TJ = 25 °C VALUES 600 30 300 -65 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN.

Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 600 Forward voltage IF = 30 A VF IF = 30 A, TJ = 150 °C - Reverse leakage current VR = VR rated IR TJ = 150 °C, VR = VR rated - Junction capacitance CT VR = 600 V - Series inductance LS Measured lead to lead 5 mm from package body - TYP.

Overview

www.vishay.com VS-30EPH06HN3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® Base common cathode 2 TO-247AC modified 1 Cathode 3 Anode PRIMARY CHARACTERISTICS IF(AV) 30 A VR 600 V VF at IF 1.34 V trr typ.

TJ max.

Key Features

  • Hyperfast recovery time.
  • Low forward voltage drop.
  • 175 °C operating junction temperature.
  • Low leakage current.
  • Single diode device.
  • AEC-Q101 qualified, meets JESD 201 class 1A whisker test.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.