Description
/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.
Features
- Minimum creepage distance 3.2 mm guaranteed
by design.
- Comparative Tracking Index: CTI 600.
- High CTI molding compound provides excellent
electrical insulation at relevant working voltages.
- Positive VF temperature coefficient for easy paralleling.
- Virtually no recovery tail and no switching losses.
- Temperature invariant switching behavior.
- 175 °C maximum operating junction temperature.
- Meets MSL level 1, per J-STD-020, LF.
VS-3C02EJ07-M3 Datasheet
