VS-3C02EJ07-M3 Description
/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimized for extreme high-speed hard switching over a wide temperature range. It is suited for demanding applications, such as bootstrap and anti-parallel diodes in AC/DC and DC/DC converters.
VS-3C02EJ07-M3 Key Features
- Minimum creepage distance 3.2 mm guaranteed
- parative Tracking Index: CTI 600
- High CTI molding pound provides excellent
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
- Temperature invariant switching behavior
- 175 °C maximum operating junction temperature
- Meets MSL level 1, per J-STD-020, LF maximum peak
- MPS structure for high ruggedness to forward current
- Meets JESD 201 class 2 whisker test
VS-3C02EJ07-M3 Applications
- halogen-free, RoHS-pliant Terminals: matte tin plated leads, solderable per J-STD-002