VS-3C02EJ07-M3 Datasheet | Vishay

FEATURES - Minimum creepage distance 3.2 mm guaranteed by design - parative Tracking Index: CTI  600 - High CTI molding pound provides excellent electrical insulation at relevant working voltages - Positive VF temperature coefficient for easy paralleling - Virtually no recovery tail and no switching losses - Temperature invariant switching behavior - 175 °C maximum operating junction temperature - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - MPS structure for high ruggedness to forward current surge events - Meets JESD 201 class 2 whisker test - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION / APPLICATIONS Wide band gap Si C based 650 V Schottky diode, designed for high performance and ruggedness. Optimized for extreme high-speed hard switching over a wide temperature range. It is suited for demanding applications, such as bootstrap and anti-parallel diodes in AC/DC and DC/DC converters. MECHANICAL DATA Case: Slim SMA HV...