VS-3C10ET07T-M3 Description
/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also remended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.
VS-3C10ET07T-M3 Key Features
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
- Temperature invariant switching behavior
- 175 °C maximum operating junction temperature
- MPS structure for high ruggedness to forward current
- Meets JESD 201 class 2 whisker test
- Material categorization: for definitions of pliance