VS-3C12ET07S2L-M3 Datasheet | Vishay

FEATURES - Majority carrier diode using Schottky technology on Si C wide band gap material - Improved VF and efficiency by thin wafer technology - Positive VF temperature coefficient for easy paralleling - Virtually no recovery tail and no switching losses - Temperature invariant switching behavior - 175 °C maximum operating junction temperature - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - MPS structure for high ruggedness to forward current surge events - Meets JESD 201 class 1A whisker test - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION / APPLICATIONS Wide band gap Si C based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also remended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output...