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VS-50MT060WHTAPbF - IGBT MTP

Key Features

  • Gen 4 warp speed IGBT technology.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-50MT060WHTAPbF Vishay Semiconductors “Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A MTP PRIMARY CHARACTERISTICS VCES VCE(on) typical at VGE = 15 V IC at TC = 25 °C Speed 600 V 2.3 V 114 A 30 kHz to 100 kHz Package MTP Circuit configuration Half bridge FEATURES • Gen 4 warp speed IGBT technology • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC) • Very low junction to case thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.