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VS-60EPS12PbF - High Voltage Input Rectifier Diode

This page provides the datasheet information for the VS-60EPS12PbF, a member of the VS-60EPS08PbF High Voltage Input Rectifier Diode family.

Description

High voltage rectifiers optimized for very low forward voltage drop with moderate leakage.

These devices are intended for use in main rectification (single or three phase bridge).

Features

  • Very low forward voltage drop.
  • 150 °C max. operating junction temperature.
  • Glass passivated pellet chip junction.
  • Designed and qualified according to JEDEC®-JESD 47 Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – VS-60EPS12PbF

Datasheet Details

Part number VS-60EPS12PbF
Manufacturer Vishay
File Size 189.34 KB
Description High Voltage Input Rectifier Diode
Datasheet download datasheet VS-60EPS12PbF Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-60EPS..-M3 Series Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base cathode 1 3 TO-247AC 2L 2 1 Cathode 3 Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IFSM TJ max. Package 60 A 800 V to 1200 V 1.09 V 1000 A 150 °C TO-247AC 2L, TO-247AC 3L Circuit configuration Single FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Glass passivated pellet chip junction • Designed and qualified according to JEDEC®-JESD 47 Available • Material categorization: for definitions of compliance please see www.vishay.
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