Datasheet Summary
.vishay.
VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Base mon cathode
D-PAK (TO-252AA)
Base mon cathode
13 Anode 2 Anode mon cathode
2 1 mon 3 Anode cathode Anode
VS-6CWT04FN
PRODUCT SUMMARY
Package
IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS
D-PAK (TO-252AA), I-PAK (TO-251AA)
2x3A 45 V 0.54 V
3 mA at 125 °C 175 °C mon cathode 14 mJ
Features
- 175 °C high performance Schottky diode
- Very low forward voltage drop
- Extremely low reverse leakage
- Optimized VF vs. IR trade off for high efficiency
- Increased ruggedness for reverse avalanche capability
- RBSOA available
-...