Datasheet Details
| Part number | VS-80EBU04HF4 |
|---|---|
| Manufacturer | Vishay |
| File Size | 130.90 KB |
| Description | Ultrafast Soft Recovery Diode |
| Datasheet | VS-80EBU04HF4-Vishay.pdf |
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Overview: www.vishay.com VS-80EBU04HF4 Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt® PowerTab® Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation PowerTab® 80 A 400 V 0.
| Part number | VS-80EBU04HF4 |
|---|---|
| Manufacturer | Vishay |
| File Size | 130.90 KB |
| Description | Ultrafast Soft Recovery Diode |
| Datasheet | VS-80EBU04HF4-Vishay.pdf |
|
|
|
/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications.
These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Continuous forward current IF(AV) Single pulse forward current IFSM Maximum repetitive forward current Operating junction and storage temperatures IFRM TJ, TStg TEST CONDITIONS TC = 122 °C TC = 25 °C Square wave, 20 kHz MAX.
400 80 800 160 -55 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage VBR, Vr IR = 100 μA IF = 80 A Forward voltage VF IF = 80 A, TJ = 175 °C IF = 80 A, TJ = 125 °C Reverse leakage current VR = VR rated IR TJ = 150 °C, VR = VR rated Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body MIN.
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