Description
Gen 4 Fred Pt technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. PARAMETER SYMBOL Cathode to anode voltage Average rectified forward current Non-repetitive peak surge current, per leg Operating junction and storage temperatures VR IF(AV) IFSM TJ, TStg TEST CONDITIONS TC = 122 °C TC = 25 °C, tp = 8.3 ms, half sine wave MAX. 600 30 240 -55 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance VBR, VR VF IR CT IR = 100 μA IF = 30 A IF = 60 A IF = 30 A, TJ = 125 °C IF = 60 A, TJ = 125 °C IF = 30 A, TJ = 150 °C IF = 60 A, TJ = 150 °C VR = VR rated TJ = 125 °C, VR = VR rated VR = 600 V MIN.
Key Features
- Gen 4 FRED Pt® technology
- Low IRRM and reverse recovery charge
- Very low forward voltage drop
- Polyimide passivated chip for high reliability standard
- 175 °C operating junction temperature
- AEC-Q101 qualified, meets JESD 201 class 1 whisker test
