VS-C4PU3006L-N3
Description
Gen 4 Fred technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element and snubbers. PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current, per leg VRRM IF(AV) IFSM Operating junction and storage temperature TJ, TStg TEST CONDITIONS TC = 146 °C TC = 25 °C, tp = 8.3 ms, half sine wave MAX.
Key Features
- Gen 4 FRED Pt® technology
- Low IRRM and reverse recovery charge
- Very low forward voltage drop
- Polyimide passivated chip for high reliability standard
- 175 °C operating junction temperature
- Designed and qualified according to JEDEC®-JESD 47
- Material categorization: for definitions of pliance please see .vishay./doc?99912
