Datasheet Details
| Part number | VS-CPV363M4KPbF |
|---|---|
| Manufacturer | Vishay |
| File Size | 253.75 KB |
| Description | IGBT |
| Download |
VS-CPV363M4KPbF Download (PDF)
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| Part number | VS-CPV363M4KPbF |
|---|---|
| Manufacturer | Vishay |
| File Size | 253.75 KB |
| Description | IGBT |
| Download |
VS-CPV363M4KPbF Download (PDF)
|
|
|
|
The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance.
www.vishay.com VS-CPV363M4KPbF Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (1.94 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 6.7 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig.
1) VCE(on) (typical) at IC = 6.0 A, 25 °C Speed 115 % 1.
| Part Number | Description |
|---|---|
| VS-CPV363M4FPbF | IGBT |
| VS-CPV363M4UPbF | IGBT SIP |
| VS-CPV362M4FPbF | IGBT SIP |
| VS-CPV364M4FPbF | IGBT SIP |
| VS-CPV364M4KPbF | IGBT SIP |
| VS-CPV364M4UPbF | IGBT SIP |
| VS-C4PH6006LHN3 | Hyperfast Soft Recovery Diode |
| VS-C4PU3006L-N3 | Ultrafast Soft Recovery Diode |
| VS-100BGQ015 | Schottky Rectifier |
| VS-100BGQ030 | Schottky Rectifier |