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VS-E4PU6006LHN3 Datasheet Ultrafast Soft Recovery Diode

Manufacturer: Vishay

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General Description

Gen 4 Fred technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Operating junction and storage temperature VRRM IF(AV) IFSM TJ, TStg TEST CONDITIONS TC = 116 °C TC = 25 °C, tp = 8.3 ms half sine wave MAX.

600 60 450 -55 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance VBR, VR VF IR CT IR = 100 μA IF = 30 A IF = 60 A IF = 30 A, TJ = 125 °C IF = 60 A, TJ = 125 °C IF = 30 A, TJ = 150 °C IF = 60 A, TJ = 150 °C VR = VR rated TJ = 125 °C, VR = VR rated VR = 600 V MIN.

Overview

www.vishay.com VS-E4PU6006LHN3 Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® Gen 4 2 1 3 TO-247AD 2L Base cathode 2 1 Cathode 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF 60 A 600 V 1.29 V trr typ.

See Recovery table TJ max.

Key Features

  • Gen 4 FRED Pt® technology.
  • Low IRRM and reverse recovery charge.
  • Very low forward voltage drop.
  • Polymide passivated chip for high reliability standard.
  • 175 °C operating junction temperature.
  • AEC-Q101 qualified, meets JESD 201 class 1A whisker test.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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