VS-E4PU6006LHN3 Overview
Gen 4 Fred technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current...
VS-E4PU6006LHN3 Key Features
- Gen 4 FRED Pt® technology
- Low IRRM and reverse recovery charge
- Very low forward voltage drop
- Polymide passivated chip for high reliability standard
- 175 °C operating junction temperature
- AEC-Q101 qualified, meets JESD 201 class 1A whisker test
- Material categorization: for definitions of pliance please see .vishay./doc?99912