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VS-GA200TH60S Datasheet IGBT

Manufacturer: Vishay

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General Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general UPS and SMPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current TC = 25 °C IC TC = 80 °C Pulsed collector current ICM (1) tp = 1 ms Diode continuous forward current IF TC = 80 °C Diode maximum forward current IFM tp = 1 ms Maximum power dissipation PD TJ = 150 °C Short circuit withstand time tSC TC = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min I2t-value, diode I2t VR= 0 V, t = 10 ms, TJ = 125 °C Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.

Overview

www.vishay.com VS-GA200TH60S Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 200 A, 25 °C Package Circuit 600 V 200 A 1.

Key Features

  • High short circuit capability.
  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 150 °C.
  • Latch-up free.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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