VS-GB100TS60NPbF - Ultrafast Speed IGBT

Features

Generation 5 Non Punch Through (NPT) technology.
Ultrafast: optimized for hard switching speed.
Low VCE(on).
10 μs short circuit capability.
Square RBSOA.
Positive VCE(on) temperature coefficient.

Vishay

Datasheet Details

Part number	VS-GB100TS60NPbF
Manufacturer	Vishay
File Size	194.82 KB
Description	Ultrafast Speed IGBT
Datasheet	VS-GB100TS60NPbF Datasheet
Additional preview pages of the VS-GB100TS60NPbF datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-GB100TS60NPbF Vishay Semiconductors INT-A-PAK “Half-Bridge” (Ultrafast Speed IGBT), 108 A INT-A-PAK PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C Speed Package Circuit 600 V 108 A 2.6 V 8 kHz to 30 kHz INT-A-PAK Half bridge FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 2, 2015 |