Download VS-GB100TS60NPbF Datasheet PDF
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VS-GB100TS60NPbF page 2
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VS-GB100TS60NPbF Key Features

  • Generation 5 Non Punch Through (NPT)
  • Ultrafast: optimized for hard switching speed
  • Low VCE(on)
  • 10 μs short circuit capability
  • Square RBSOA
  • Positive VCE(on) temperature coefficient
  • HEXFRED® antiparallel diode with ultrasoft reverse
  • Industry standard package
  • Al2O3 DBC
  • UL approved file E78996

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VS-GB100TS60NPbF Description

VS-GB100TS60NPbF Vishay Semiconductors INT-A-PAK “Half-Bridge” (Ultrafast Speed IGBT), 108 A INT-A-PAK PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C Speed Package Circuit 600 V 108 A 2.6 V 8 kHz to 30 kHz INT-A-PAK Half bridge.