VS-GB150TS60NPbF - Ultrafast Speed IGBT

Features

Generation 5 Non Punch Through (NPT) technology.
Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz.
Low VCE(on).
10 μs short circuit capability.
Square RBSOA.
Positive VCE(on) temperature coefficient.

Vishay

Datasheet Details

Part number	VS-GB150TS60NPbF
Manufacturer	Vishay
File Size	195.49 KB
Description	Ultrafast Speed IGBT
Datasheet	VS-GB150TS60NPbF Datasheet
Additional preview pages of the VS-GB150TS60NPbF datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-GB150TS60NPbF Vishay Semiconductors INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A INT-A-PAK PRODUCT SUMMARY VCES IC DC VCE(on) at 150 A, 25 °C Package Circuit 600 V 138 A 2.64 V INT-A-PAK Half bridge FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: For definitions of compliance please see www.vishay.

Published: Mar 2, 2015 |