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VS-GB50TP120N - IGBT

Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS.

Features

  • High short circuit capability, self limiting to 6 x IC.
  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 150 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – VS-GB50TP120N

Datasheet Details

Part number VS-GB50TP120N
Manufacturer Vishay
File Size 90.61 KB
Description IGBT
Datasheet download datasheet VS-GB50TP120N Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-GB50TP120N Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A INT-A-PAK FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 50 A, 25 °C Package Circuit 1200 V 50 A 1.
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