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VS-GB90DA60U - IGBT

Features

  • NPT warp 2 speed IGBT technology with positive temperature coefficient.
  • Square RBSOA.

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Full PDF Text Transcription

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www.vishay.com VS-GB90DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A SOT-227 PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Package Circuit 600 V 90 A at 90 °C 2.40 V 108 A at 90 °C SOT-227 Single Switch Diode FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.
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