VS-GB90DA60U Description
.vishay. VS-GB90DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A SOT-227 PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Package Circuit 600 V 90 A at 90 °C 2.40 V 108 A at 90 °C SOT-227 Single Switch.
VS-GB90DA60U Key Features
- Square RBSOA
- HEXFRED® antiparallel diodes with ultrasoft
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: For definitions of pliance please see .vishay./doc?99912
- Designed for increased operating efficiency in power
- Easy to assemble and parallel
- Direct mounting to heatsink