VS-GP250SA60S Description
.vishay. VS-GP250SA60S Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C Speed 600 V 239 A at 90 °C 1.10.
VS-GP250SA60S Key Features
- Standard speed Trench PT IGBT
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: for definitions of pliance
- Optimized for high current inverter stages (AC TIG welding
- Direct mounting to heatsink
- Plug-in patible with other SOT-227 packages
- Lower conduction losses