Description
Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.
Features
- Low VCE(sat) trench IGBT technology.
- 10 μs short circuit capability.
- VCE(sat) with positive temperature coefficient.
- Maximum junction temperature 175 °C.
- Low inductance case.
- Fast and soft reverse recovery antiparallel FWD.
- Isolated copper baseplate using DCB (Direct Copper
Bonding) technology.
- Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912 .
VS-GT100TP120N Datasheet
