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VS-GT100TP120N Datasheet Half Bridge IGBT

Manufacturer: Vishay

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General Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current Maximum power dissipation Short circuit withstand time RMS isolation voltage VCES VGES IC ICM (1) IF IFM (1) PD tSC VISOL TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms TJ = 175 °C TC = 125 °C f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature.

Overview

www.vishay.com VS-GT100TP120N Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C Speed Package Circuit 1200 V 100 A 1.

Key Features

  • Low VCE(sat) trench IGBT technology.
  • 10 μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 .

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