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VS-GT100TP120N Datasheet

Manufacturer: Vishay
VS-GT100TP120N datasheet preview

VS-GT100TP120N Details

Part number VS-GT100TP120N
Datasheet VS-GT100TP120N Datasheet PDF (Download)
File Size 183.81 KB
Manufacturer Vishay
Description Half Bridge IGBT
VS-GT100TP120N page 2 VS-GT100TP120N page 3

VS-GT100TP120N Overview

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. pulse width limited by maximum junction temperature.

VS-GT100TP120N Key Features

  • Low VCE(sat) trench IGBT technology
  • 10 μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175 °C
  • Low inductance case
  • Fast and soft reverse recovery antiparallel FWD
  • Isolated copper baseplate using DCB (Direct Copper
  • Material categorization: for definitions of pliance

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