Datasheet Summary
.vishay.
Vishay Semiconductors
Half Bridge IGBT Power Module, 1200 V, 100 A
INT-A-PAK
PRODUCT SUMMARY
VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C
Speed
Package
Circuit
1200 V 100 A
1.90 V
8 kHz to 30 kHz INT-A-PAK Half bridge
Features
- Low VCE(sat) trench IGBT technology
- 10 μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175 °C
- Low inductance case
- Fast and soft reverse recovery antiparallel FWD
- Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
- Material categorization: for definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS
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