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VS-GT100TP60N Datasheet

Manufacturer: Vishay
VS-GT100TP60N datasheet preview

VS-GT100TP60N Details

Part number VS-GT100TP60N
Datasheet VS-GT100TP60N-Vishay.pdf
File Size 182.95 KB
Manufacturer Vishay
Description Half Bridge IGBT
VS-GT100TP60N page 2 VS-GT100TP60N page 3

VS-GT100TP60N Overview

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. pulse width limited by maximum junction temperature MAX.

VS-GT100TP60N Key Features

  • Low VCE(on) trench IGBT technology
  • 5 μs short circuit capability
  • VCE(on) with positive temperature coefficient
  • Maximum junction temperature 175 °C
  • Low inductance case
  • Fast and soft reverse recovery antiparallel FWD
  • Isolated copper baseplate using DCB (direct copper
  • Material categorization: for definitions of pliance

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