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VS-GT120DA65U Datasheet IGBT

Manufacturer: Vishay

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Overview

www.vishay.com VS-GT120DA65U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Speed 650 V 120 A at 90 °C 1.

Key Features

  • Trench IGBT technology with positive temperature coefficient.
  • Square RBSOA.
  • FRED Pt® antiparallel diodes with ultrasoft reverse recovery.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL pending.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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