VS-GT175DA120U
Key Features
- Trench IGBT technology with positive temperature coefficient
- Square RBSOA
- 10 μs short circuit capability
- HEXFRED® antiparallel diodes with ultrasoft reverse recovery
- TJ maximum = 150 °C
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: for definitions of pliance please see .vishay./doc?99912 BENEFITS