VS-GT180DA120U Description
.vishay. VS-GT180DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES IC(DC) VCE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 185 A at 90 °C 1.55 V 32 A at 90 °C 8 kHz to 30 kHz Package.
VS-GT180DA120U Key Features
- 1200 V trench and field stop technology
- Low switching losses
- Positive temperature coefficient
- Easy paralleling
- Square RBSOA
- 10 μs short circuit capability
- HEXFRED® antiparallel diodes with ultrasoft reverse
- TJ maximum = 150 °C
- Fully isolated package
- Very low internal inductance ( 5 nH typical)