Datasheet Details
| Part number | VS-GT250SA60S |
|---|---|
| Manufacturer | Vishay |
| File Size | 191.61 KB |
| Description | Insulated Gate Bipolar Transistor |
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| Part number | VS-GT250SA60S |
|---|---|
| Manufacturer | Vishay |
| File Size | 191.61 KB |
| Description | Insulated Gate Bipolar Transistor |
| Download |
|
|
|
|
www.vishay.com VS-GT250SA60S Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A SOT-227 PRIMARY CHARACTERISTICS VCES VCE(on) (typical) at 200 A, 25 °C IC at TC = 90 °C Speed 600 V 1.
| Part Number | Description |
|---|---|
| VS-GT200TP065N | Half Bridge - Trench IGBT |
| VS-GT100LA120UX | IGBT |
| VS-GT100NA120UX | IGBT |
| VS-GT100TP120N | Half Bridge IGBT |
| VS-GT100TP60N | Half Bridge IGBT |
| VS-GT120DA65U | IGBT |
| VS-GT140DA60U | IGBT |
| VS-GT175DA120U | IGBT |
| VS-GT180DA120U | IGBT |
| VS-GT300FD060N | DIAP Low Profile 3-Levels Half-Bridge Inverter Stage |