VS-GT400TH120U
Description
Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current TC = 25 °C IC TC = 80 °C Pulsed collector current ICM tp = 1 ms Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms Maximum power dissipation PD TJ = 175 °C RMS isolation voltage Operating junction temperature range VISOL TJ f = 50 Hz, t = 1 min MAX.
Key Features
- Low VCE(on) trench IGBT technology
- 10 μs short circuit capability
- VCE(on) with positive temperature coefficient
- Maximum junction temperature 175 °C
- Low inductance case
- Fast and soft reverse recovery antiparallel FWD
- Isolated copper baseplate using DCB (Direct Copper Bonding) technology
- Material categorization: for definitions of pliance please see .vishay./doc?99912
