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VS-GT400TH120U Datasheet Molding Type Module IGBT

Manufacturer: Vishay

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General Description

Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current TC = 25 °C IC TC = 80 °C Pulsed collector current ICM tp = 1 ms Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms Maximum power dissipation PD TJ = 175 °C RMS isolation voltage Operating junction temperature range VISOL TJ f = 50 Hz, t = 1 min MAX.

1200 ± 30 750 400 800 400 800 2344 2500 -40 to +150 UNITS V A W V °C Revision: 12-Jun-15 1 Document Number: 94854 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

Overview

www.vishay.com VS-GT400TH120U Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 400 A, 25 °C Speed Package Circuit 1200 V 400 A 1.

Key Features

  • Low VCE(on) trench IGBT technology.
  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 175 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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