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VS-GT400TH60N - IGBT

Description

Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness.

It is designed for applications such as UPS and SMPS.

Features

  • Low VCE(on) trench IGBT technology.
  • Low switching losses.
  • 5 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 175 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com VS-GT400TH60N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 400 A Dual INT-A-PAK FEATURES • Low VCE(on) trench IGBT technology • Low switching losses • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 400 A, 25 °C Speed 600 V 400 A 1.
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