VS-GT50LA65UF Description
.vishay. VS-GT50LA65UF Vishay Semiconductors “Low Side Chopper” IGBT SOT-227, 650 V, 50 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 50 A, 25 °C IF DC Package 650 V 50 A at 59 °C 1.70 V 50 A at 25 °C SOT-227 Circuit configuration Low side.
VS-GT50LA65UF Key Features
- Trench IGBT technology
- Higher switching frequency up to 150 kHz
- Square RBSOA
- Low VCE(on)
- FRED Pt® Gen 4 clamping diode
- Fully isolated package
- Very low internal inductance (≤ 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: for definitions of pliance