VS-GT50TP60N Key Features
- Low VCE(on) trench IGBT technology
- 5 μs short circuit capability
- VCE(on) with positive temperature coefficient
- Maximum junction temperature 175 °C
- Low inductance case
- Fast and soft reverse recovery antiparallel FWD
- Isolated copper baseplate using DCB (Direct Copper
- Material categorization: For definitions of pliance