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VS-HFA08SD60S-M3 - Ultrafast Soft Recovery Diode

General Description

/ APPLICATIONS These diodes are optimized to reduce losses and EMI / RFI in high frequency power conditioning systems.

The softness of the recovery eliminates the need for a snubber in most applications.

Key Features

  • Ultrafast recovery time.
  • Ultrasoft recovery.
  • Very low IRRM.
  • Very low Qrr.
  • Guaranteed avalanche.
  • Specified at operating conditions.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com VS-HFA08SD60S-M3 Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A DPAK (TO-252AA) 2, 4 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF trr typ. TJ max. Package 8A 600 V 1.4 V 18 ns 150 °C DPAK (TO-252AA) Circuit configuration Single FEATURES • Ultrafast recovery time • Ultrasoft recovery • Very low IRRM • Very low Qrr • Guaranteed avalanche • Specified at operating conditions • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.